MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
2SJ348-VB
P-Channel 60V 50A 104.2W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET P-CH 60V 50A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- 2SJ348-VB
- Store part #
- C45350871
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C45350871
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹238.38 | ₹238.38 |
| 10+ | ₹208.33 | ₹2,083.30 |
| 50+ | ₹192.01 | ₹9,600.50 |
| 100+ | ₹116.04 | ₹11,604.00 |
| 500+ | ₹107.76 | ₹53,880.00 |
| 1,000+ | ₹104.07 | ₹1,04,070.00 |
1 × ₹238.38
₹238.38
excl. GST
₹281.29 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
2SJ348-VB
₹238.38 for 1 + GST
Specifications
- Drain to Source Voltage
- 60V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 50A
- Output Capacitance(Coss)
- 390pF
- Ciss-Input Capacitance
- 3.7nF
- Pd - Power Dissipation
- 104.2W
- Reverse Transfer Capacitance (Crss)
- 290pF
- RDS(on)
- 26mΩ@4.5V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 60nC@4.5V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- P-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.26 g
Overview
The AOD4185 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. The AOD4185 complies with RoHS and green product requirements, is 100% guaranteed avalanche-rated (EAS), and is fully qualified for reliability.
Applications
- Load Switch
Key features
- Trench Power MOS FET 100 % UIS Tested
Alternatives
Similar parts — check the datasheet before substituting.
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