ADG1436YCPZ-REEL7

The ADG1436 is a monolithic CMOS device containing two independently selectable SPDT switches. An EN input on the LFCSP package enables or disable the device. When disabled, all channels are switched off. Each switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. In the off condition, signal levels up to the supplies are blocked. Both switches exhibit break-beforemake switching action for use in multiplexer applications. The ADG1436 is designed on an iCMOS° process. iCMOS (industrial-CMOS) is a modular manufacturing process combining high voltage CMOS (complementary metal-oxide semiconductor) and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no previous generation of high voltage parts has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size. The on-resistance profile is very flat over the full analog input range, ensuring excellent linearity and low distortion when switching audio signals. iCMOS construction ensures ultralow power dissipation, making the part ideally suited for portable and battery-powered instruments.

Applications

• Automatic test equipment
• Data acquisition systems
• Battery-powered systems
• Sample-and-hold systems
• Audio signal routing
• Communication systems
• Relay replacement

Key features

• 1.5 Ω on resistance
• 0.3 Ω on-resistance flatness
• 0.1 Ω on-resistance match between channels
• Continuous current per channel: LFCSP package: up to 400 mA; TSSOP package: up to 260 mA
• Fully specified at +12 V, ±15 V
• 1 Mo supply required
• 3 V logic-compatible inputs
• Rail-to-rail operation
• 16-lead TSSOP and 4 mm×4 mm, 16-lead LFCSP packages
• 2.6 Ω maximum on resistance over temperature
• Minimum distortion
• Ultralow power dissipation: <0.03 μW