MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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InfineonDatasheet (PDF)
AIMCQ120R060M1TXTMA1
1.2kV 44A 259W 75mΩ 1 N-channel N-Channel SOP-22 Single FETs, MOSFETs RoHS
SOP-22ROHS CompliantActive
- Manufacturer
- Infineon
- Manufacturer part #
- AIMCQ120R060M1TXTMA1
- Store part #
- C41859248
- Package / case
- SOP-22
- Category
- Single FETs, MOSFETs
- Packaging
- Tray
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C41859248
Stock & price checked 42 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,790.46 | ₹1,790.46 |
| 10+ | ₹1,702.00 | ₹17,020.00 |
| 30+ | ₹1,548.70 | ₹46,461.00 |
| 100+ | ₹1,415.15 | ₹1,41,515.00 |
1 × ₹1,790.46
₹1,790.46
excl. GST
₹2,112.74 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 750 per tray
AIMCQ120R060M1TXTMA1
₹1,790.46 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 1.2kV
- Current - Continuous Drain(Id)
- 44A
- Output Capacitance(Coss)
- 43pF
- Ciss-Input Capacitance
- 880pF
- Pd - Power Dissipation
- 259W
- Reverse Transfer Capacitance (Crss)
- 2pF
- RDS(on)
- 75mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 32nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 5.1V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tray
- Standard pack
- 750 / Tray
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.627 g
Overview
Pin Definition: - Pin 1 - Gate - Pin 2 - Drive Source - Pin 3...11 - Power Source - Pin 12...22, Pad - Drain Note: Drive Source and Power Source pins are not interchangeable; swapping them may cause malfunction
Applications
- On-board charger
- DC/DC converter
- Auxiliary driver
Key features
- V_DSS = 1200 V at Tvj = -55...175°C
- I_DDC = 44 A at Tc = 25°C
- R_DS(on) = 60 mΩ at V_GS = 20 V, Tvj = 25°C
- New performance-optimized chip technology (Gen1p) with improved R_DS(on)*A
- Best-in-class switching energy for reduced switching losses and lower cooling requirements
- Lowest device capacitance for higher switching speed and increased power density
- Low C_rss/C_iss ratio combined with high V_GS(th) to prevent parasitic turn-on and support unipolar gate drive
- Reduced total gate charge Q_G for lower drive power and losses
- Increased recommended on-state voltage (V_GS(on) = 20 V) for reduced R_DS(on)
- .XT chip connection technology for best-in-class thermal performance
- Low package stray inductance for faster, cleaner switching
- Drive (Kelvin) source pin for improved gate control and reduced switching losses
- Creepage distance > 4.75 mm for V_rms(max) > 950 V, per IEC60664, Material Group I, Pollution Degree 2
- SMT package for automated assembly and reduced system cost
- Low R_th top-side cooled package for optimized thermal performance and power density
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