HXY MOSFETDatasheet (PDF)
AOK50B65M2
300W 100A 650V FS (Field Stop) TO-247 Single IGBTs
TO-247RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- AOK50B65M2
- Store part #
- C49003325
- Package / case
- TO-247
- Category
- Single IGBTs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C49003325
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹288.61 | ₹288.61 |
| 10+ | ₹245.76 | ₹2,457.60 |
| 30+ | ₹218.94 | ₹6,568.20 |
| 90+ | ₹191.53 | ₹17,237.70 |
| 510+ | ₹179.15 | ₹91,366.50 |
| 990+ | ₹173.66 | ₹1,71,923.40 |
1 × ₹288.61
₹288.61
excl. GST
₹340.56 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
AOK50B65M2
₹288.61 for 1 + GST
Specifications
- Td(off)
- 122ns
- Pd - Power Dissipation
- 300W
- Td(on)
- 24ns
- Current - Collector(Ic)
- 100A
- Collector-Emitter Breakdown Voltage (Vces)
- 650V
- Reverse Transfer Capacitance (Cres)
- 92pF
- IGBT Type
- FS (Field Stop)
- Gate-Emitter Threshold Voltage (Vge(th)@Ic)
- 4.5V@1mA
- Operating Temperature
- -55℃~+175℃
- Vce Saturation(VCE(sat))
- 1.95V@50A,15V
- Reverse Recovery Time(trr)
- 98ns
- Switching Energy(Eoff)
- 1.14mJ
- Turn-On Energy (Eon)
- 1.38mJ
- Input Capacitance(Cies)
- 3.363nF
- Gate Charge(Qg)
- 179nC@15V
- Output Capacitance(Coes)
- 206pF
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7.943 g
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