MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VBsemi ElecDatasheet (PDF)
APT11N80KC3-VB
N-Channel 800V 208W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 800V TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- APT11N80KC3-VB
- Store part #
- C22389908
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C22389908
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹378.10 | ₹378.10 |
| 10+ | ₹319.91 | ₹3,199.10 |
| 50+ | ₹283.57 | ₹14,178.50 |
| 100+ | ₹246.40 | ₹24,640.00 |
| 500+ | ₹229.59 | ₹1,14,795.00 |
| 1,000+ | ₹222.24 | ₹2,22,240.00 |
1 × ₹378.10
₹378.10
excl. GST
₹446.16 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
APT11N80KC3-VB
₹378.10 for 1 + GST
Specifications
- Drain to Source Voltage
- 800V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 15A
- Output Capacitance(Coss)
- 80pF
- Ciss-Input Capacitance
- 1.72nF
- Pd - Power Dissipation
- 208W
- Reverse Transfer Capacitance (Crss)
- 4pF
- RDS(on)
- 380mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 48nC@10V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.3 g
Overview
Applications
- Server and telecom power supplies
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) supplies
- Lighting
- High Intensity Discharge (HID) lamps
- Fluorescent ballast lighting
Key features
- Low figure of merit (FOM) R\text on x Qg
- Low input capacitance \left(Ciss\right)
- Reduced switching and conduction losses
- Ultra-low gate charge \left(Qg\right)
- Avalanche energy rated (UIS)
Alternatives
Similar parts — check the datasheet before substituting.
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