AUIRF7640S2TR

The AUIRF7640S2TR/TR1 combines the latest automotive HEXFET® power MOSFET silicon technology with the advanced DirectFET® package platform, delivering a best-in-class solution for automotive Class D audio amplifier applications. When following the manufacturing methods and process guidelines described in application note AN-1035, the DirectFET® package is compatible with existing layout geometries, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques used in power applications. The DirectFET® package supports dual-side cooling to maximize thermal transfer efficiency in automotive power systems. This HEXFET® power MOSFET is optimized for gate charge, body diode reverse recovery, and internal gate resistance to improve key performance metrics of Class D audio amplifiers, including efficiency, total harmonic distortion (THD), and EMI. Furthermore, compared to conventional wire-bond SOIC packages, the DirectFET® package platform features lower parasitic inductance and resistance, improving EMI performance by reducing voltage ringing associated with current transients. These characteristics make this MOSFET an ideal component for automotive Class D audio amplifiers and other high-speed switching systems.

Applications

• Automotive Class-D audio amplifiers
• Other high-speed switching systems

Key features

• Optimized for Class D audio amplifiers and high-speed switching applications
• Low on-resistance Rds(on) for improved efficiency
• Low gate charge Qg for improved THD and efficiency
• Low reverse recovery charge Qrr for improved THD and reduced EMI
• Low parasitic inductance for reduced ringing and EMI
• Up to 100W output power per channel into 8Ω load
• Dual-side cooling
• Operating temperature up to 175°C
• Repetitive avalanche capability for robustness and reliability
• Lead-free, RoHS compliant, and halogen-free
• Automotive-grade qualified