BFP620H7764

Robust, flexible, small and reliable devices for complementary wireless solutions Our products stand for Performance, Versatility, Supply security, Quality and reliability, Design-in and sales support. We lead innovation and have a proven ability to flexibly support our customers in fragmented and rapidly developing markets. Infineon provides with the broadest RF discretes portfolio for complementary wireless For over a decade, Infineon Technologies have paved the way in all radio frequency segments, with RF transistors providing an outstanding RF performance, superior signal quality and robustness – all this at a highly attractive price. Silicon-germanium (SiGe) based on B9 technology benefits from in-house process builds and years of experience in high-volume SiGe:C bipolar technology, which has been in mass production since 2002. B9-based product serie deliver an RF performance comparable to GaAs in terms of linearity and noise figures; while also providing higher robustness given the ESD protection, strong design reliability and the option of integrating dense analog circuitry and digital control on the same mixed-signal IC. Not only does this allow wireless equipment manufacturers to add more functionality onto devices where space is a constraint, but it is also available at a competitive price, while offering the ultimate in quality and manufacturing efficiency. B9 comes in different variants, but the 7th and 8th generations – each with its own optimization for specific application areas – are our focus series. Infineon’s 7th generation RF transistor family is an easy-to-use series of discrete Heterojunction Bipolar Transistors (HBT) which is suitable as a single- and dual-band Low-Noise Amplifier (LNA) solution for a vast range of WiFi connectivity applications. This series of devices combines a 44GHz fT silicon-germanium:carbide (SiGe:C) B7HF process with advanced device geometry engineering conceived to reduce the parasitic capacitance in order to enhance high-frequency characteristics. Furthermore, they allow engineers to increase the RF link budget and Signal-to-Noise Ratio (SNR) of their AP routers and mobile stations when wider coverage areas are needed and especially when a higher order modulation scheme, such as 256 Quadrature Amplitude Modulation (QAM), is used. They offer a high throughput where a more stringent SNR for both the AP and client is required.

Key features

• High transition frequency fT = 45 GHz
• High gain (19 dB) and NF level (0.65 dB)
• High linearity OP1dB +8.5 dBm and OIP3 +19 dBm at 2.4 GHz at low current consumption of 13 mA
• High maximum RF input power >1.5 kV HBM ESD robustness
• Broad frequency range: from 450 MHz to 12 GHz
• Reduced power consumption
• Device suitability under input signal power-stress
• Unmatched general purpose device for high flexibility in vast frequency range
• Energy savings and extended battery life
• Improved high input power robustness