MDD(Microdiode Semiconductor)
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HXY MOSFETDatasheet (PDF)
BSC886N03LSGATMA1-HXY
37W 30V 80A 4.7mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- BSC886N03LSGATMA1-HXY
- Store part #
- C53263070
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
42 in stock
#C53263070
Stock & price checked 37 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹62.23 | ₹62.23 |
| 10+ | ₹49.71 | ₹497.10 |
| 30+ | ₹44.29 | ₹1,328.70 |
| 100+ | ₹37.60 | ₹3,760.00 |
| 500+ | ₹34.58 | ₹17,290.00 |
| 1,000+ | ₹32.64 | ₹32,640.00 |
1 × ₹62.23
₹62.23
excl. GST
₹73.43 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
BSC886N03LSGATMA1-HXY
₹62.23 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 310pF
- Ciss-Input Capacitance
- 1.93nF
- Pd - Power Dissipation
- 37W
- Configuration
- Standalone
- Drain to Source Voltage
- 30V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 80A
- Reverse Transfer Capacitance (Crss)
- 260pF
- RDS(on)
- 4.7mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 38nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.7V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.156 g
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