MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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25,99,250 in stock
VBsemi ElecDatasheet (PDF)
BUK755R4-100E-VB
N-Channel 100V 120A 120W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 100V 120A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- BUK755R4-100E-VB
- Store part #
- C22389619
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C22389619
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹211.94 | ₹211.94 |
| 10+ | ₹179.39 | ₹1,793.90 |
| 50+ | ₹159.01 | ₹7,950.50 |
| 100+ | ₹138.02 | ₹13,802.00 |
| 500+ | ₹128.56 | ₹64,280.00 |
| 1,000+ | ₹124.57 | ₹1,24,570.00 |
1 × ₹211.94
₹211.94
excl. GST
₹250.09 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
BUK755R4-100E-VB
₹211.94 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Output Capacitance(Coss)
- 2.025nF
- Current - Continuous Drain(Id)
- 120A
- Ciss-Input Capacitance
- 10nF
- Pd - Power Dissipation
- 120W
- Reverse Transfer Capacitance (Crss)
- 165pF
- RDS(on)
- 5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 120nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.06 g
Overview
Key features
- ThunderFET power MOSFET
- Maximum 175 °C junction temperature
- 100 % Rg and UIS tested
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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