MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
BUZ31 H-VB
N-Channel 200V 30A 125W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 200V 30A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- BUZ31 H-VB
- Store part #
- C22389911
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
23 in stock
#C22389911
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹144.95 | ₹144.95 |
| 10+ | ₹120.17 | ₹1,201.70 |
| 50+ | ₹90.40 | ₹4,520.00 |
| 100+ | ₹78.02 | ₹7,802.00 |
| 500+ | ₹70.62 | ₹35,310.00 |
| 1,000+ | ₹66.93 | ₹66,930.00 |
1 × ₹144.95
₹144.95
excl. GST
₹171.04 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
BUZ31 H-VB
₹144.95 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 200V
- Output Capacitance(Coss)
- 180pF
- Current - Continuous Drain(Id)
- 30A
- Ciss-Input Capacitance
- 1.8nF
- Pd - Power Dissipation
- 125W
- Reverse Transfer Capacitance (Crss)
- 80pF
- RDS(on)
- 110mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 34nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.06 g
Overview
Applications
- Primary-side switch - N-channel MOSFET
Key features
- Trench power MOSFET
- Junction temperature 175 °C
- PWM optimized
- 100% gate resistance (Rg) tested
- RoHS compliant (Directive 2002/95/EC)
Alternatives
Similar parts — check the datasheet before substituting.
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