MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
Wuxi China Resources Huajing MicroelectronicsDatasheet (PDF)
CS6N80ARR-G
N-Channel 800V 6A 180W Through Hole TO-262-3
TO-262-3RoHSActive
MOSFET N-CH 800V 6A TO-262-3
- Manufacturer
- Wuxi China Resources Huajing Microelectronics
- Manufacturer part #
- CS6N80ARR-G
- Store part #
- C2832481
- Package / case
- TO-262-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
Out of stock
#C2832481
Stock & price checked 11 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹106.83 | ₹106.83 |
| 10+ | ₹91.56 | ₹915.60 |
| 50+ | ₹83.84 | ₹4,192.00 |
| 100+ | ₹76.31 | ₹7,631.00 |
| 500+ | ₹71.80 | ₹35,900.00 |
| 1,000+ | ₹69.43 | ₹69,430.00 |
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
Specifications
- Output Capacitance(Coss)
- 115pF
- Ciss-Input Capacitance
- 1.556nF
- Pd - Power Dissipation
- 180W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 800V
- Current - Continuous Drain(Id)
- 6A
- Reverse Transfer Capacitance (Crss)
- 4.7pF
- RDS(on)
- 2.2Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 28.4nC@10V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.49 g
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