MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
Wuxi China Resources Huajing MicroelectronicsDatasheet (PDF)
CS8N60A8H
N-Channel 600V 8A 110W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 600V 8A TO-220AB
- Manufacturer
- Wuxi China Resources Huajing Microelectronics
- Manufacturer part #
- CS8N60A8H
- Store part #
- C2833624
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
Out of stock
#C2833624
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹110.06 | ₹110.06 |
| 10+ | ₹94.14 | ₹941.40 |
| 50+ | ₹86.41 | ₹4,320.50 |
| 100+ | ₹78.45 | ₹7,845.00 |
| 500+ | ₹73.94 | ₹36,970.00 |
| 1,000+ | ₹71.36 | ₹71,360.00 |
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
Specifications
- Output Capacitance(Coss)
- 115pF
- Ciss-Input Capacitance
- 1.253nF
- Pd - Power Dissipation
- 110W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 600V
- Current - Continuous Drain(Id)
- 8A
- Reverse Transfer Capacitance (Crss)
- 15pF
- RDS(on)
- 1.2Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 29nC@10V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.08 g
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