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DF80R12W2H3FB11 Infineon
Infineon

DF80R12W2H3FB11

IGBT 1.2kV 20A 20mW Through Hole,62.8x56.7mm

Through Hole,62.8x56.7mmROHS CompliantActive

IGBT 1.2kV 20A TH

Manufacturer
Infineon
Manufacturer part #
DF80R12W2H3FB11
Store part #
C17271226
Package / case
Through Hole,62.8x56.7mm
Category
IGBT Modules
Packaging
Tray
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

288 in stock

#C17271226

Stock & price checked 8 days ago

QuantityUnit pricePack price
1+₹6,127.73₹6,127.73
30+₹5,912.71₹1,77,381.30

1 × ₹6,127.73

₹6,127.73

excl. GST

₹7,230.72 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 7–10 working days
  • GST invoice with every order
  • Standard pack: 15 per tray

DF80R12W2H3FB11

₹6,127.73 for 1 + GST

Specifications

Td(off)
250ns
Pd - Power Dissipation
20mW
Td(on)
25ns
Current - Collector(Ic)
20A
Collector-Emitter Breakdown Voltage (Vces)
1.2kV
Reverse Transfer Capacitance (Cres)
130pF
IGBT Type
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
5V@1.00mA
Gate Charge(Qg)
320nC
Vce Saturation(VCE(sat))
1.75V@20A,15V
Switching Energy(Eoff)
800uJ
Turn-On Energy (Eon)
260uJ
Operating Temperature
-40℃~+150℃@(Tj)
Input Capacitance(Cies)
2.35nF

Packaging & compliance

RoHS
ROHS Compliant
Lifecycle
Active
Moisture sensitivity
MSL 1 (unlimited)
ECCN
EAR99
Packaging
Tray
Standard pack
15 / Tray
Sold per
Piece
Minimum order
1
Unit weight
1 g

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