MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HXY MOSFETDatasheet (PDF)
DMG9N65CTI-HXY
650V 5.1A 29W 820mΩ@18V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs
TO-220FRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- DMG9N65CTI-HXY
- Store part #
- C53134051
- Package / case
- TO-220F
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
9 in stock
#C53134051
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹134.55 | ₹134.55 |
| 10+ | ₹111.89 | ₹1,118.90 |
| 50+ | ₹99.29 | ₹4,964.50 |
| 100+ | ₹85.23 | ₹8,523.00 |
| 500+ | ₹78.93 | ₹39,465.00 |
| 1,000+ | ₹76.20 | ₹76,200.00 |
1 × ₹134.55
₹134.55
excl. GST
₹158.77 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
DMG9N65CTI-HXY
₹134.55 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Configuration
- Standalone
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 5.1A
- Output Capacitance(Coss)
- 12pF
- Ciss-Input Capacitance
- 68pF
- Pd - Power Dissipation
- 29W
- Reverse Transfer Capacitance (Crss)
- 1.8pF
- RDS(on)
- 820mΩ@18V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 5.9nC
- Gate Threshold Voltage (Vgs(th))
- 2.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1 g
Same category
