MICROCHIP

DN2450N8-G

500V 230mA 1.62W 7Ω@0V 1 N-channel N-Channel SOT-89-3 Single FETs, MOSFETs RoHS

SOT-89-3ROHS3 CompliantActive

Manufacturer: MICROCHIP
Manufacturer part #: DN2450N8-G
Store part #: C616346
Package / case: SOT-89-3
Category: Single FETs, MOSFETs
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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14 in stock

#C616346

Stock & price checked 7 days ago

Quantity	Unit price	Pack price
1+	₹162.11	₹162.11
10+	₹158.18	₹1,581.80
30+	₹155.56	₹4,666.80
100+	₹152.95	₹15,295.00

Quantity (min 1)

1 × ₹162.11

₹162.11

excl. GST

₹191.29 incl. 18% GST

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Standard pack: 2,000 per reel

DN2450N8-G

₹162.11 for 1 + GST

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Specifications

Operating Temperature: -55℃~+150℃
Drain to Source Voltage: 500V
Output Capacitance(Coss): 40pF
Current - Continuous Drain(Id): 230mA
Ciss-Input Capacitance: 200pF
Pd - Power Dissipation: 1.62W
Reverse Transfer Capacitance (Crss): 25pF
RDS(on): 7Ω@0V
Number: 1 N-channel
Vgs: ±20V
Type: N-Channel

Packaging & compliance

RoHS: ROHS3 Compliant
Lifecycle: Active
ECCN: EAR99
Packaging: Tape & Reel (TR)
Standard pack: 2,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 0.07 g

Overview

This low-threshold, depletion-mode, normally-on transistor employs an advanced vertical diffused metal oxide semiconductor (DMOS) structure combined with a proven silicon-gate fabrication process. This combination gives the device the power handling capability of a bipolar transistor, along with the high input impedance and positive temperature coefficient inherent to MOS devices. As with all MOS structures, the device is immune to thermal runaway and thermally induced secondary breakdown. The vertical DMOS FET is well suited for a wide range of switching and amplification applications that typically demand very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speed.