Varnitronics
FDD10AN06A0-VB VBsemi Elec
VBsemi Elec

FDD10AN06A0-VB

N-Channel 60V 58A 136W Surface Mount TO-252

TO-252RoHSActive

MOSFET N-CH 60V 58A TO-252

Manufacturer
VBsemi Elec
Manufacturer part #
FDD10AN06A0-VB
Store part #
C7428954
Package / case
TO-252
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

16 in stock

#C7428954

Stock & price checked 3 days ago

QuantityUnit pricePack price
1+₹84.66₹84.66
10+₹68.69₹686.90
30+₹60.71₹1,821.30
100+₹52.73₹5,273.00
500+₹47.89₹23,945.00
1,000+₹45.38₹45,380.00

1 × ₹84.66

₹84.66

excl. GST

₹99.90 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 2,500 per reel

FDD10AN06A0-VB

₹84.66 for 1 + GST

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Specifications

Operating Temperature
-55℃~+175℃
Drain to Source Voltage
60V
Output Capacitance(Coss)
470pF
Current - Continuous Drain(Id)
58A
Ciss-Input Capacitance
2.65nF
Pd - Power Dissipation
136W
Reverse Transfer Capacitance (Crss)
225pF
RDS(on)
10mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
47nC@10V
Gate Threshold Voltage (Vgs(th))
1V
Type
N-Channel

Packaging & compliance

RoHS
RoHS
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
2,500 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.389 g

Overview

CS10N50F A9R is a silicon N-channel enhancement-mode VDMOSFET fabricated using self-aligned planar technology, which reduces on-state losses, improves switching performance, and enhances avalanche energy. This transistor is suitable for various power switching circuits to achieve system miniaturization and higher efficiency. Available in TO-220F package, RoHS compliant.

Applications

  • Power switching circuits for adapters and chargers.

Key features

  • 175 °C Junction Temperature TrenchFET Power MOSFET

Alternatives

Similar parts — check the datasheet before substituting.

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