Varnitronics
FDD5N50NZTM onsemi
onsemi

FDD5N50NZTM

62W 500V 4A 1.38Ω@10V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS

TO-252AAROHS3 CompliantActive

MOSFET N-CH 500V 4A TO-252AA

Manufacturer
onsemi
Manufacturer part #
FDD5N50NZTM
Store part #
C903576
Package / case
TO-252AA
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

39 in stock

#C903576

Stock & price checked 7 days ago

QuantityUnit pricePack price
1+₹124.14₹124.14
10+₹100.84₹1,008.40
30+₹89.08₹2,672.40
100+₹77.32₹7,732.00
500+₹70.57₹35,285.00
1,000+₹66.86₹66,860.00

1 × ₹124.14

₹124.14

excl. GST

₹146.49 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 2,500 per reel

FDD5N50NZTM

₹124.14 for 1 + GST

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Specifications

Output Capacitance(Coss)
50pF
Ciss-Input Capacitance
440pF
Pd - Power Dissipation
62W
Operating Temperature
-55℃~+150℃
Drain to Source Voltage
500V
Current - Continuous Drain(Id)
4A
Reverse Transfer Capacitance (Crss)
4pF
RDS(on)
1.38Ω@10V
Number
1 N-channel
Gate Charge(Qg)
12nC@10V
Vgs
±25V
Gate Threshold Voltage (Vgs(th))
3V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
2,500 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.372 g

Overview

UniFET™ II MOSFETs are based on advanced planar stripe and DMOS technology. This advanced MOSFET series features the lowest on-resistance among planar MOSFETs, combined with excellent switching performance and higher avalanche energy capability. In addition, the integrated gate-to-source ESD diode enables UniFET™ II MOSFETs to withstand HBM surge stress in excess of 2kV. This device family is suitable for switching power converter applications such as Power Factor Correction (PFC), Flat Panel Display (FPD) TV power supplies, ATX, and electronic lamp ballasts.

Applications

  • LCD/LED/PDP TVs - Lighting - Uninterruptible Power Supplies

Key features

  • RDS(on) = 1.38 Ω (typ.) @ VGS = 10 V, ID = 2 A
  • Low gate charge (typ. 9 nC)
  • Low Crss (typ. 4 pF)
  • 100% avalanche tested
  • Improved dv/dt capability
  • Enhanced ESD capability
  • RoHS compliant

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