Varnitronics
FDD7N60NZTM onsemi
onsemi

FDD7N60NZTM

N-Channel 600V 5.5A 90W Surface Mount TO-252(DPAK)

TO-252(DPAK)ROHS3 CompliantActive

MOSFET N-CH 600V 5.5A TO-252(DPAK)

Manufacturer
onsemi
Manufacturer part #
FDD7N60NZTM
Store part #
C463713
Package / case
TO-252(DPAK)
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

12 in stock

#C463713

Stock & price checked 3 days ago

QuantityUnit pricePack price
1+₹213.12₹213.12
10+₹182.22₹1,822.20
30+₹162.90₹4,887.00
100+₹142.96₹14,296.00
500+₹134.02₹67,010.00
1,000+₹130.16₹1,30,160.00

1 × ₹213.12

₹213.12

excl. GST

₹251.48 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 2,500 per reel

FDD7N60NZTM

₹213.12 for 1 + GST

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Specifications

Operating Temperature
-55℃~+150℃
Drain to Source Voltage
600V
Current - Continuous Drain(Id)
5.5A
Ciss-Input Capacitance
730pF
Pd - Power Dissipation
90W
Reverse Transfer Capacitance (Crss)
10pF
RDS(on)
1.05Ω@10V
Number
1 N-channel
Gate Charge(Qg)
17nC@10V
Gate Threshold Voltage (Vgs(th))
3V

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
2,500 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.371 g

Overview

UniFETTM II MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFETTM II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Applications

  • Lighting
  • Uninterruptible Power Supply

Key features

  • RDS(on)=1.05 Ω (Typ.) @ VGS = 10 V, ID = 2.75 A
  • Low Gate Charge (Typ. 13 nC)
  • Low Crss (Typ. 7 pF)
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • ESD Improved Capability
  • RoHS Compliant

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