MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDG6303N
N-Channel Array 25V 0.5A 0.3W Surface Mount SC-70-6
SC-70-6ROHS3 CompliantActive
MOSFET N-CH ARR 25V 0.5A SC-70-6
- Manufacturer
- onsemi
- Manufacturer part #
- FDG6303N
- Store part #
- C512895
- Package / case
- SC-70-6
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
2,320 in stock
#C512895
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹36.96 | ₹184.80 |
| 50+ | ₹28.97 | ₹1,448.50 |
| 150+ | ₹25.55 | ₹3,832.50 |
| 500+ | ₹21.29 | ₹10,645.00 |
| 3,000+ | ₹19.38 | ₹58,140.00 |
| 6,000+ | ₹18.23 | ₹1,09,380.00 |
5 × ₹36.96
₹184.80
excl. GST
₹218.06 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDG6303N
₹184.80 for 5 + GST
Specifications
- Output Capacitance(Coss)
- 28pF
- Ciss-Input Capacitance
- 50pF
- Pd - Power Dissipation
- 300mW
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 25V
- Current - Continuous Drain(Id)
- 500mA
- Reverse Transfer Capacitance (Crss)
- 9pF
- RDS(on)
- 450mΩ@4.5V
- Number
- 2 N-Channel
- Gate Charge(Qg)
- 2.3nC@5V
- Vgs
- -0.5V~8V
- Gate Threshold Voltage (Vgs(th))
- 1.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.028 g
Overview
These dual N-Channel logic level enhancement mode field effect transistors are produced using proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Applications
- DC/DC Converter
Key features
- 25 V, 0.50 A continuous, 1.5 A peak.
- RDS(ON)=0.45 Ω @ VGS=4.5 V
- RDS(ON)=0.60 Ω @ VGS=2.7 V
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th)<1.5V).
- Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
- Compact industry standard SC70-6 surface mount package.
- SuperSOT-8
- The pinouts are symmetrical; pin 1 and 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.
Alternatives
Similar parts — check the datasheet before substituting.
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