MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDI045N10A-F102
100V 164A 263W Through Hole TO-262-3
TO-262-3ROHS3 CompliantActive
MOSFET 100V 164A TO-262-3
- Manufacturer
- onsemi
- Manufacturer part #
- FDI045N10A-F102
- Store part #
- C605026
- Package / case
- TO-262-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
66 in stock
#C605026
Stock & price checked 43 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹607.11 | ₹607.11 |
| 10+ | ₹523.60 | ₹5,236.00 |
| 50+ | ₹474.03 | ₹23,701.50 |
| 100+ | ₹423.80 | ₹42,380.00 |
| 500+ | ₹400.75 | ₹2,00,375.00 |
| 1,000+ | ₹390.31 | ₹3,90,310.00 |
1 × ₹607.11
₹607.11
excl. GST
₹716.39 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
FDI045N10A-F102
₹607.11 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 925pF
- Ciss-Input Capacitance
- 5.27nF
- Pd - Power Dissipation
- 263W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 164A
- Reverse Transfer Capacitance (Crss)
- 34pF
- RDS(on)
- 3.8mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 54nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.82 g
Overview
This N−Channel MOSFET is produced using ON Semiconductor’s advance POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance.
Applications
- Synchronous Rectification for ATX / Server / Telecom PSU
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supplies
- Micro Solar Inverter
Key features
- RDS(on)=3.8 mΩ (Typ.) @ VGS=10 V, ID = 100 A
- Fast Switching Speed
- Low Gate Charge, QG=54 nC (Typ.)
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- This Device is Pb −Free and is RoHS Compliant
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
| FDI045N10A#C3278179onsemi · I2PAK(TO-262) | onsemi | I2PAK(TO-262) | On request | ₹293.76 · 0 in stock | View | |
| AUIRFSL4010-313TRL#C3281518Infineon · TO-262-3 | Infineon | TO-262-3 | On request | ₹290.69 · 0 in stock | View | |
| AUIRFSL4010#C533425Infineon · TO-262 | Infineon | TO-262 | On request | ₹565.44 · 0 in stock | View | |
| AOW2500#C6124280AOS · TO-262 | AOS | TO-262 | On request | ₹326.90 · 0 in stock | View | |
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