MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDM3622
N-Channel 100V 4.4A 2.1W Surface Mount WDFN-8(3.3x3.3)
WDFN-8(3.3x3.3)ROHS3 CompliantActive
MOSFET N-CH 100V 4.4A WDFN-8(3.3x3.3)
- Manufacturer
- onsemi
- Manufacturer part #
- FDM3622
- Store part #
- C890886
- Package / case
- WDFN-8(3.3x3.3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
1,739 in stock
#C890886
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹193.28 | ₹193.28 |
| 10+ | ₹158.39 | ₹1,583.90 |
| 30+ | ₹139.11 | ₹4,173.30 |
| 100+ | ₹117.44 | ₹11,744.00 |
| 500+ | ₹107.90 | ₹53,950.00 |
| 1,000+ | ₹103.58 | ₹1,03,580.00 |
1 × ₹193.28
₹193.28
excl. GST
₹228.07 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDM3622
₹193.28 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 125pF
- Ciss-Input Capacitance
- 1.09nF
- Pd - Power Dissipation
- 2.1W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 4.4A
- Reverse Transfer Capacitance (Crss)
- 55pF
- RDS(on)
- 60mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 17nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.19 g
Overview
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Applications
- Distributed Power Architectures and VRMs
- Primary Switch for 24V and 48V Systems
- High Voltage Synchronous Rectifier
- Formerly developmental type 82744
- MLP 3.3x3.3
Key features
- Max rDS(on)=60mΩ at VGS=10Vs , ΔD=4.4A
- Max rDS(on)=80mΩ at VGS=6.0V , ΔlD=3.8A
- Low Miller Charge
- Low QRR Body Diode
- Optimized efficiency at high frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | FDMC2610#C890928onsemi · WDFN-8(3.3x3.3) | onsemi | WDFN-8(3.3x3.3) | 8 | ₹835.04 · 8 in stock | View |
 | SISS5110DN-T1-GE3#C20346157VISHAY · PowerPAK1212-8S | VISHAY | PowerPAK1212-8S | 8 | ₹203.56 · 8 in stock | View |
 | RQ3P300BHTB1#C3278113ROHM · HSMT-8(3.2x3) | ROHM | HSMT-8(3.2x3) | 2 | ₹448.21 · 2 in stock | View |
 | CMSC600N15#C52976751Cmos · DFN-8(3.3x3.3) | Cmos | DFN-8(3.3x3.3) | 820 | ₹43.58 · 820 in stock | View |
 | NTTFS022N15MC#C2902080onsemi · WDFN-8-EP(3.3x3.3) | onsemi | WDFN-8-EP(3.3x3.3) | 6 | ₹410.54 · 6 in stock | View |
Same category
