MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
FDMC4435BZ
P-Channel 30V 18A 31W Surface Mount WDFN-8(3.3x3.3)
WDFN-8(3.3x3.3)ROHS3 CompliantActive
MOSFET P-CH 30V 18A WDFN-8(3.3x3.3)
- Manufacturer
- onsemi
- Manufacturer part #
- FDMC4435BZ
- Store part #
- C556450
- Package / case
- WDFN-8(3.3x3.3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
8 in stock
#C556450
Stock & price checked 22 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹123.44 | ₹123.44 |
| 10+ | ₹100.18 | ₹1,001.80 |
| 30+ | ₹88.44 | ₹2,653.20 |
| 100+ | ₹76.93 | ₹7,693.00 |
| 500+ | ₹69.97 | ₹34,985.00 |
| 1,000+ | ₹66.49 | ₹66,490.00 |
1 × ₹123.44
₹123.44
excl. GST
₹145.66 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMC4435BZ
₹123.44 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 310pF
- Ciss-Input Capacitance
- 2.04nF
- Pd - Power Dissipation
- 31W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 18A
- Reverse Transfer Capacitance (Crss)
- 420pF
- RDS(on)
- 20mΩ@10V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 53nC@10V
- Vgs
- ±25V
- Gate Threshold Voltage (Vgs(th))
- 1.8V
- Type
- P-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.14 g
Overview
This P-channel MOSFET is manufactured using an advanced power trench process specially optimized to minimize on-resistance. The device is well-suited for power management and load switching applications commonly found in laptops and portable battery packs.
Applications
- High-side switch in DC-DC buck converters
- Notebook battery power management
- Load switch in notebooks
Key features
- Maximum rDS(on) = 20 mΩ at VGS = -10 V, ID = -8.5 A
- Maximum rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.3 A
- Extended VGSS range (-25 V) for battery applications
- High-performance trench technology for ultra-low rDS(on)
- High power and current handling capability
- Typical HBM ESD protection class >7 kV
- 100% UIL tested
- Lead-free pins, RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
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