MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDMC610P
P-Channel 12V 80A 48W Surface Mount Power-33-8
Power-33-8ROHS3 CompliantActive
MOSFET P-CH 12V 80A Power-33-8
- Manufacturer
- onsemi
- Manufacturer part #
- FDMC610P
- Store part #
- C890936
- Package / case
- Power-33-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C890936
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹597.64 | ₹597.64 |
| 10+ | ₹515.45 | ₹5,154.50 |
| 30+ | ₹466.56 | ₹13,996.80 |
| 100+ | ₹417.26 | ₹41,726.00 |
| 500+ | ₹394.45 | ₹1,97,225.00 |
| 1,000+ | ₹384.19 | ₹3,84,190.00 |
1 × ₹597.64
₹597.64
excl. GST
₹705.22 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMC610P
₹597.64 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.62nF
- Ciss-Input Capacitance
- 1.25nF
- Pd - Power Dissipation
- 48W
- Drain to Source Voltage
- 12V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 80A
- Reverse Transfer Capacitance (Crss)
- 2.015nF
- RDS(on)
- 3.9mΩ@4.5V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 71nC
- Vgs
- ±8V
- Gate Threshold Voltage (Vgs(th))
- 400mV
- Type
- P-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.3 g
Overview
This P-channel MOSFET is designed to improve overall efficiency and minimize switching node ringing in DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low on-resistance rDS(on), fast switching speed, and body diode reverse recovery performance.
Applications
- High-end switch for high-end computing
- High power density DC-DC synchronous buck converter
Key features
- Maximum rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A
- Maximum rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A
- Advanced switching performance
- Low output capacitance, gate resistance, and gate charge for improved efficiency
- Shield gate technology reduces switching node ringing and enhances immunity to EMI and cross-conduction
- RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
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