MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDMC7570S
N-Channel 25V 40A 59W Surface Mount PQFN-8(3x3)
PQFN-8(3x3)ROHS3 CompliantActive
MOSFET N-CH 25V 40A PQFN-8(3x3)
- Manufacturer
- onsemi
- Manufacturer part #
- FDMC7570S
- Store part #
- C890941
- Package / case
- PQFN-8(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
16 in stock
#C890941
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹412.74 | ₹412.74 |
| 10+ | ₹352.87 | ₹3,528.70 |
| 30+ | ₹315.22 | ₹9,456.60 |
| 100+ | ₹276.69 | ₹27,669.00 |
| 500+ | ₹259.49 | ₹1,29,745.00 |
| 1,000+ | ₹251.87 | ₹2,51,870.00 |
1 × ₹412.74
₹412.74
excl. GST
₹487.03 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMC7570S
₹412.74 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.01nF
- Ciss-Input Capacitance
- 4.41nF
- Pd - Power Dissipation
- 59W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 25V
- Current - Continuous Drain(Id)
- 40A
- Reverse Transfer Capacitance (Crss)
- 255pF
- RDS(on)
- 2mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 49nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.7V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.07 g
Overview
The FDMC7570S is designed to minimize losses in power conversion applications. Combining advances in silicon technology and packaging technology, it achieves the lowest on-resistance RDS(on) while maintaining excellent switching performance. The device also benefits from an efficient monolithic Schottky body diode.
Applications
- Synchronous rectifier for DC/DC converters
- Notebook Vcore/GPU low-side switch
- Network point-of-load low-side switch
- Telecom secondary-side rectification
Key features
- Maximum on-resistance RDS(on) = 2 mΩ at VGS = 10 V, ID = 27 A
- Maximum on-resistance RDS(on) = 2.9 mΩ at VGS = 4.5 V, ID = 21.5 A
- Advanced packaging and configuration for low RDS(on) and high efficiency
- Synchronous FET (SyncFET) Schottky body diode
- 100% single-pulse avalanche energy (UIL) tested
- Lead-free and RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
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