MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDMC86184
N-Channel 100V 57A 54W Surface Mount PQFN-8(3.3x3.3)
PQFN-8(3.3x3.3)ROHS3 CompliantActive
MOSFET N-CH 100V 57A PQFN-8(3.3x3.3)
- Manufacturer
- onsemi
- Manufacturer part #
- FDMC86184
- Store part #
- C463951
- Package / case
- PQFN-8(3.3x3.3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
56 in stock
#C463951
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹362.08 | ₹362.08 |
| 10+ | ₹307.99 | ₹3,079.90 |
| 30+ | ₹274.32 | ₹8,229.60 |
| 100+ | ₹228.93 | ₹22,893.00 |
| 500+ | ₹213.29 | ₹1,06,645.00 |
| 1,000+ | ₹206.56 | ₹2,06,560.00 |
1 × ₹362.08
₹362.08
excl. GST
₹427.25 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMC86184
₹362.08 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.27nF
- Ciss-Input Capacitance
- 2.09nF
- Pd - Power Dissipation
- 54W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 57A
- Reverse Transfer Capacitance (Crss)
- 25pF
- RDS(on)
- 8.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 20nC@6V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.068 g
Overview
This N-Channel MV MOSFET is produced using advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Applications
- Primary DC-DC MOSFET
- Synchronous Rectifier in DC-DC and AC-DC
- Motor Drive
- Solar
Key features
- Shielded Gate MOSFET Technology
- Max rDS(on)=8.5 mΩ at VGS = 10 V, ID = 1 A
- Max rDS(on)=24.8 mΩ at VGS = 6 V, ID = 10 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS Compliant
Alternatives
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