Varnitronics
FDMC86240 onsemi
onsemi

FDMC86240

2.3W 150V 4.6A 41.7mΩ@10V 1 N-channel N-Channel WDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

WDFN-8(3.3x3.3)ROHS3 CompliantActive

N-Channel Shielded Gate PowerTrench MOSFET

Manufacturer
onsemi
Manufacturer part #
FDMC86240
Store part #
C890966
Package / case
WDFN-8(3.3x3.3)
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

3 in stock

#C890966

Stock & price checked 10 days ago

QuantityUnit pricePack price
1+₹239.42₹239.42
10+₹233.81₹2,338.10
30+₹230.14₹6,904.20
100+₹226.47₹22,647.00

1 × ₹239.42

₹239.42

excl. GST

₹282.52 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

FDMC86240

₹239.42 for 1 + GST

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Specifications

Output Capacitance(Coss)
79pF
Ciss-Input Capacitance
680pF
Pd - Power Dissipation
2.3W
Operating Temperature
-55℃~+150℃
Drain to Source Voltage
150V
Current - Continuous Drain(Id)
4.6A
Reverse Transfer Capacitance (Crss)
4.3pF
RDS(on)
41.7mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
11nC@10V
Vgs
±20V
Gate Threshold Voltage (Vgs(th))
2.9V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.139 g

Overview

This N-Channel MOSFET is produced using advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Applications

  • DC - DC Conversion

Key features

  • Shielded Gate MOSFET Technology
  • Max rDS(on)=51 mΩ at VGS=10 V, ID=4.6 A
  • Max rDS(on)=70 mΩ at VGS=6 V, ID=3.9 A
  • Low Profile - 1 mm max in Power 33
  • 100% UIL Tested
  • RoHS Compliant

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