MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
FDMD8540L
62W 40V 156A 1.5mΩ@10V 2 N-Channel N-Channel PQFN-8-EP(5x6) Single FETs, MOSFETs RoHS
PQFN-8-EP(5x6)ROHS CompliantActive
MOSFET 2N-CH 40V 156A PQFN-8-EP(5x6)
- Manufacturer
- onsemi
- Manufacturer part #
- FDMD8540L
- Store part #
- C606105
- Package / case
- PQFN-8-EP(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
73 in stock
#C606105
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹650.36 | ₹650.36 |
| 10+ | ₹554.43 | ₹5,544.30 |
| 30+ | ₹497.38 | ₹14,921.40 |
| 100+ | ₹439.70 | ₹43,970.00 |
| 500+ | ₹413.12 | ₹2,06,560.00 |
| 1,000+ | ₹401.24 | ₹4,01,240.00 |
1 × ₹650.36
₹650.36
excl. GST
₹767.42 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMD8540L
₹650.36 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.668nF
- Ciss-Input Capacitance
- 7.94nF
- Pd - Power Dissipation
- 62W
- Operating Temperature
- -55℃~+150℃
- Configuration
- Half-Bridge
- Drain to Source Voltage
- 40V
- Current - Continuous Drain(Id)
- 156A
- Reverse Transfer Capacitance (Crss)
- 135pF
- RDS(on)
- 1.5mΩ@10V
- Number
- 2 N-Channel
- Gate Charge(Qg)
- 81nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.8V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.144 g
Overview
This device integrates two 40 V N-channel MOSFETs in a dual power (5 mm x 6 mm) package. The high-side source and low-side drain are internally connected, suitable for half-bridge/full-bridge applications, featuring a low source inductance package with silicon technology offering a low rDS(on)/Qg figure of merit.
Applications
- Point-of-load synchronous dual-channel
- Single-phase motor half-bridge
- Half-bridge/full-bridge secondary synchronous rectification
Key features
- Q1: N-channel
- Max rDS(on) = 1.5 mΩ at VGS = 10 V, ID = 33 A
- Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 26 A
- Q2: N-channel
- Max rDS(on) = 1.5 mΩ at VGS = 10 V, ID = 33 A
- Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 26 A
- Ideal for flexible layout on primary side of bridge topologies
- 100% UIL tested
- Kelvin source pin for high-side MOSFET gate drive
- Lead-free and RoHS compliant
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