MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
FDMS0309AS
50W 30V 49A 3.5mΩ@10V 1 N-channel N-Channel Power-56-8 Single FETs, MOSFETs RoHS
Power-56-8ROHS3 CompliantActive
- Manufacturer
- onsemi
- Manufacturer part #
- FDMS0309AS
- Store part #
- C891038
- Package / case
- Power-56-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
50 in stock
#C891038
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹309.09 | ₹309.09 |
| 10+ | ₹304.79 | ₹3,047.90 |
| 30+ | ₹301.99 | ₹9,059.70 |
| 100+ | ₹299.20 | ₹29,920.00 |
1 × ₹309.09
₹309.09
excl. GST
₹364.73 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMS0309AS
₹309.09 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 815pF
- Ciss-Input Capacitance
- 2.255nF
- Pd - Power Dissipation
- 50W
- Drain to Source Voltage
- 30V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 49A
- Reverse Transfer Capacitance (Crss)
- 85pF
- RDS(on)
- 3.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 34nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.171 g
Overview
FDMS0309AS is designed to minimize losses in power conversion applications. Combining advances in silicon and packaging technologies, it achieves the lowest on-resistance rDS(on) while maintaining excellent switching performance. The device also benefits from an efficient monolithic Schottky body diode.
Applications
- Synchronous rectifier for DC/DC converters
- Notebook Vcore/GPU low-side switch
- Network point-of-load low-side switch
- Telecom secondary-side rectification
Key features
- Maximum on-resistance rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A
- Maximum on-resistance rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A
- Advanced packaging combined with silicon technology for low rDS(on) and high efficiency
- SyncFET™ Schottky body diode
- MSL1 robust package design
- 100% UIL tested
- RoHS compliant
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