MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
FDMS10C4D2N
125W 100V 17A 4.2mΩ@10V 1 N-channel N-Channel PQFN-8(5x6) Single FETs, MOSFETs RoHS
PQFN-8(5x6)ROHS3 CompliantActive
- Manufacturer
- onsemi
- Manufacturer part #
- FDMS10C4D2N
- Store part #
- C891044
- Package / case
- PQFN-8(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C891044
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹789.04 | ₹789.04 |
| 10+ | ₹778.08 | ₹7,780.80 |
| 30+ | ₹770.78 | ₹23,123.40 |
| 100+ | ₹763.46 | ₹76,346.00 |
1 × ₹789.04
₹789.04
excl. GST
₹931.07 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMS10C4D2N
₹789.04 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.73nF
- Ciss-Input Capacitance
- 4.5nF
- Pd - Power Dissipation
- 125W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 17A
- Reverse Transfer Capacitance (Crss)
- 20pF
- RDS(on)
- 4.2mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 65nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.56 g
Overview
This N-channel medium-voltage MOSFET is manufactured using Fairchild Semiconductor's advanced PowerTrench® process, which incorporates shielded gate technology. This process is optimized to minimize on-resistance while maintaining excellent switching performance through a best-in-class soft body diode.
Applications
- Industrial Motor Drives - Industrial Power Supplies - Industrial Automation - Battery-Powered Tools - Battery Protection - Solar Inverters - UPS and Energy Inverters - Energy Storage - Load Switches
Key features
- Shielded Gate MOSFET technology
- Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
- Max rDS(on) = 14 mΩ at VGS = 6 V, ID = 22 A
- Qrr 50% lower than other MOSFET suppliers
- Reduced switching noise/EMI
- MSL1 robust package design
- 100% UIS tested
- RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
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