MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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25,99,250 in stock
onsemiDatasheet (PDF)
FDMS7682
N-Channel 30V 59A 33W Power56-8
Power56-8ROHS3 CompliantActive
MOSFET N-CH 30V 59A Power56-8
- Manufacturer
- onsemi
- Manufacturer part #
- FDMS7682
- Store part #
- C393365
- Package / case
- Power56-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
69 in stock
#C393365
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹93.44 | ₹93.44 |
| 10+ | ₹76.06 | ₹760.60 |
| 30+ | ₹67.37 | ₹2,021.10 |
| 100+ | ₹58.68 | ₹5,868.00 |
| 500+ | ₹53.46 | ₹26,730.00 |
| 1,000+ | ₹50.86 | ₹50,860.00 |
1 × ₹93.44
₹93.44
excl. GST
₹110.26 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMS7682
₹93.44 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 640pF
- Ciss-Input Capacitance
- 1.885nF
- Pd - Power Dissipation
- 33W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 59A
- Reverse Transfer Capacitance (Crss)
- 75pF
- RDS(on)
- 10.4mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 30nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.204 g
Overview
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Applications
- IMVP Vcore Switching for Notebook
- VRM Vcore Switching for Desktop and server
- OringFET / Load Switching
- DC-DC Conversion
Key features
- Max rDS(on)=6.3 mΩ at VGS=10 V, ID=14 A
- Max rDS(on)=10.4 mΩ at VGS=4.5 V, ID=11 A
- Advanced Package and Silicon combination for low rDS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant
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