Varnitronics
FDMS8050 onsemi
onsemi

FDMS8050

30V 200A 156W 0.65mΩ@10V 1 N-channel Power-56-8 Single FETs, MOSFETs RoHS

Power-56-8ROHS3 CompliantActive
Manufacturer
onsemi
Manufacturer part #
FDMS8050
Store part #
C463000
Package / case
Power-56-8
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

10 in stock

#C463000

Stock & price checked 2 days ago

QuantityUnit pricePack price
1+₹969.59₹969.59
10+₹947.41₹9,474.10
30+₹932.65₹27,979.50
100+₹917.87₹91,787.00

1 × ₹969.59

₹969.59

excl. GST

₹1,144.12 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

FDMS8050

₹969.59 for 1 + GST

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Specifications

Operating Temperature
-55℃~+150℃
Drain to Source Voltage
30V
Current - Continuous Drain(Id)
200A
Ciss-Input Capacitance
22.61nF
Pd - Power Dissipation
156W
Reverse Transfer Capacitance (Crss)
310pF
RDS(on)
0.65mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
285nC@10V
Gate Threshold Voltage (Vgs(th))
1.8V

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.64 g

Overview

This N-channel MOSFET is designed to improve overall efficiency and minimize switching node ringing in DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge and ultra-low rDS(on).

Applications

  • Ideal Diode MOSFET
  • Synchronous Rectifier

Key features

  • Maximum r DS(on) = 0.65 mΩ at V GS = 10 V, I D = 55 A
  • Maximum r DS(on) = 0.9 mΩ at V GS = 4.5 V, I D = 47 A
  • Advanced package and silicon combination for low r DS(on) and high efficiency
  • MSL1 robust package design
  • 100% UII tested
  • RoHS compliant

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