MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
FDMS86150ET100
187W 100V 128A 3.9mΩ@10V 1 N-channel N-Channel Power-56-8 Single FETs, MOSFETs RoHS
Power-56-8ROHS3 CompliantActive
- Manufacturer
- onsemi
- Manufacturer part #
- FDMS86150ET100
- Store part #
- C891090
- Package / case
- Power-56-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C891090
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,098.49 | ₹1,098.49 |
| 10+ | ₹1,073.46 | ₹10,734.60 |
| 30+ | ₹1,056.71 | ₹31,701.30 |
| 100+ | ₹1,039.94 | ₹1,03,994.00 |
1 × ₹1,098.49
₹1,098.49
excl. GST
₹1,296.22 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMS86150ET100
₹1,098.49 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 696pF
- Ciss-Input Capacitance
- 3.055nF
- Pd - Power Dissipation
- 187W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 128A
- Reverse Transfer Capacitance (Crss)
- 29pF
- RDS(on)
- 3.9mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 44nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.57 g
Overview
This N-channel MOSFET is manufactured using the advanced PowerTrench® process with integrated shielded gate technology. The process is optimized for on-resistance while maintaining excellent switching performance.
Applications
- Primary DC-DC MOSFET
- Secondary synchronous rectifier
- Load switch
Key features
- Extended junction temperature (TJ) rating up to 175°C
- Shielded Gate MOSFET technology
- Maximum on-resistance rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A
- Maximum on-resistance rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A
- Advanced package and silicon combination for low on-resistance and high efficiency
- MSL1 high-reliability package design
- 100% UII tested
- RoHS compliant
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