MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDMS86181
N-Channel 100V 124A 125W Power56-8
Power56-8ROHS3 CompliantActive
MOSFET N-CH 100V 124A Power56-8
- Manufacturer
- onsemi
- Manufacturer part #
- FDMS86181
- Store part #
- C348548
- Package / case
- Power56-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
2,789 in stock
#C348548
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹218.08 | ₹218.08 |
| 10+ | ₹183.99 | ₹1,839.90 |
| 30+ | ₹162.70 | ₹4,881.00 |
| 100+ | ₹140.98 | ₹14,098.00 |
| 500+ | ₹130.99 | ₹65,495.00 |
| 1,000+ | ₹126.86 | ₹1,26,860.00 |
1 × ₹218.08
₹218.08
excl. GST
₹257.33 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMS86181
₹218.08 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.73nF
- Ciss-Input Capacitance
- 4.125nF
- Pd - Power Dissipation
- 125W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 124A
- Reverse Transfer Capacitance (Crss)
- 40pF
- RDS(on)
- 12mΩ@6V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 59nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.3 g
Overview
This N-Channel MV MOSFET is produced using advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Applications
- Primary DC-DC MOSFET
- Synchronous Rectifier in DC-DC and AC-DC
- Motor Drive
- Solar
Key features
- Shielded Gate MOSFET Technology
- Max rDS(on)=4.2 mΩ at VGS=10 V, lD=44 A
- Max rDS(on)=12 mΩ at VGS=6 V, lD=22 A
- 50% lower Qrr than other MOSFET suppliers
- Lowers switching noise/EMI
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant
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