MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDMS86300
N-Channel 80V 19A 80A 2.5W 104W Surface Mount PQFN-8(5x6)
PQFN-8(5x6)ROHS3 CompliantActive
MOSFET N-CH 80V 19A 80A PQFN-8(5x6)
- Manufacturer
- onsemi
- Manufacturer part #
- FDMS86300
- Store part #
- C512898
- Package / case
- PQFN-8(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
14 in stock
#C512898
Stock & price checked 31 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹370.37 | ₹370.37 |
| 10+ | ₹316.58 | ₹3,165.80 |
| 30+ | ₹282.79 | ₹8,483.70 |
| 100+ | ₹248.38 | ₹24,838.00 |
| 500+ | ₹232.74 | ₹1,16,370.00 |
| 1,000+ | ₹226.07 | ₹2,26,070.00 |
1 × ₹370.37
₹370.37
excl. GST
₹437.04 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMS86300
₹370.37 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 957pF
- Ciss-Input Capacitance
- 7.082nF
- Pd - Power Dissipation
- 2.5W;104W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 80V
- Current - Continuous Drain(Id)
- 19A;80A
- Reverse Transfer Capacitance (Crss)
- 26pF
- RDS(on)
- 3.9mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 86nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.21 g
Overview
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Applications
- OringFET / Load Switching
- DC-DC Conversion
Key features
- Maximum r DS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A
- Maximum r DS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A
- Advanced combination of packaging and silicon technology for low r\textDS(on) and high efficiency
- Next-generation enhanced body diode technology with soft-recovery characteristics
- MSL1 robust package design
- 100% UIS tested
- RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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