onsemi

FDMS86500L

N-Channel 60V 158A 104W Surface Mount DFN-8(4.9x5.8)

PQFN-8(5x6)ROHS3 CompliantActive

MOSFET N-CH 60V 158A DFN-8(4.9x5.8)

Manufacturer: onsemi
Manufacturer part #: FDMS86500L
Store part #: C606113
Package / case: PQFN-8(5x6)
Category: Single FETs, MOSFETs
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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175 in stock

#C606113

Stock & price checked 4 days ago

Quantity	Unit price	Pack price
1+	₹186.25	₹186.25
10+	₹156.55	₹1,565.50
30+	₹140.29	₹4,208.70
100+	₹111.01	₹11,101.00
500+	₹103.00	₹51,500.00
1,000+	₹99.30	₹99,300.00

Quantity (min 1)

1 × ₹186.25

₹186.25

excl. GST

₹219.77 incl. 18% GST

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Standard pack: 3,000 per reel

FDMS86500L

₹186.25 for 1 + GST

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Specifications

Output Capacitance(Coss): 1.47nF
Ciss-Input Capacitance: 9.42nF
Pd - Power Dissipation: 104W
Operating Temperature: -55℃~+150℃
Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 158A
Reverse Transfer Capacitance (Crss): 50pF
RDS(on): 2.1mΩ@10V
Number: 1 N-channel
Gate Charge(Qg): 117nC
Vgs: ±20V
Gate Threshold Voltage (Vgs(th)): 1.8V
Type: N-Channel

Packaging & compliance

RoHS: ROHS3 Compliant
Lifecycle: Active
ECCN: EAR99
Packaging: Tape & Reel (TR)
Standard pack: 3,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 0.218 g

Overview

This N−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.