MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VBsemi ElecDatasheet (PDF)
FDP047AN08AO-VB
N-Channel 80V 100A 180W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 80V 100A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- FDP047AN08AO-VB
- Store part #
- C2680877
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
20 in stock
#C2680877
Stock & price checked 10 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹157.11 | ₹157.11 |
| 10+ | ₹131.69 | ₹1,316.90 |
| 50+ | ₹107.35 | ₹5,367.50 |
| 100+ | ₹91.49 | ₹9,149.00 |
| 500+ | ₹84.54 | ₹42,270.00 |
| 1,000+ | ₹81.27 | ₹81,270.00 |
1 × ₹157.11
₹157.11
excl. GST
₹185.39 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
FDP047AN08AO-VB
₹157.11 for 1 + GST
Specifications
- Drain to Source Voltage
- 80V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 1.12nF
- Current - Continuous Drain(Id)
- 100A
- Ciss-Input Capacitance
- 3.855nF
- Pd - Power Dissipation
- 180W
- Reverse Transfer Capacitance (Crss)
- 376pF
- RDS(on)
- 7mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 35.5nC@10V
- Gate Threshold Voltage (Vgs(th))
- 3.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.682 g
Overview
Applications
- Primary-side switching
- Synchronous rectification
- DC/AC inverter
- LED backlighting
Key features
- Trench power MOSFET
- 100% Rg and UIS tested
Alternatives
Similar parts — check the datasheet before substituting.
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