MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
FDP8D5N10C-VB
N-Channel 100V 120A Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 100V 120A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- FDP8D5N10C-VB
- Store part #
- C47993965
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C47993965
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹247.30 | ₹247.30 |
| 10+ | ₹213.61 | ₹2,136.10 |
| 50+ | ₹164.50 | ₹8,225.00 |
| 100+ | ₹142.76 | ₹14,276.00 |
| 500+ | ₹132.99 | ₹66,495.00 |
| 1,000+ | ₹128.86 | ₹1,28,860.00 |
1 × ₹247.30
₹247.30
excl. GST
₹291.81 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
FDP8D5N10C-VB
₹247.30 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 120A
- Output Capacitance(Coss)
- 2.025nF
- Ciss-Input Capacitance
- 10nF
- Pd - Power Dissipation
- 370W
- Reverse Transfer Capacitance (Crss)
- 165pF
- RDS(on)
- 5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 120nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 5.84 g
Overview
Applications
- OR gate
- Server
- DC/DC
Key features
- Lightning power MOSFET
- Maximum junction temperature 175°C
- 100% Rq and UIS tested
- Material category: see RoHS for compliance definitions
- Compliant with standards
- N-channel MOSFET
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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