MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
FDS3580
50W 80V 7.6A 33mΩ@6V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS
SOIC-8ROHS3 CompliantActive
80V N-Channel MOSFET, Current:7.6A, Voltage:80V
- Manufacturer
- onsemi
- Manufacturer part #
- FDS3580
- Store part #
- C258220
- Package / case
- SOIC-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
50 in stock
#C258220
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹417.38 | ₹417.38 |
| 10+ | ₹356.71 | ₹3,567.10 |
| 30+ | ₹318.64 | ₹9,559.20 |
| 100+ | ₹279.92 | ₹27,992.00 |
| 500+ | ₹262.31 | ₹1,31,155.00 |
| 1,000+ | ₹254.69 | ₹2,54,690.00 |
1 × ₹417.38
₹417.38
excl. GST
₹492.51 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
FDS3580
₹417.38 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 180pF
- Ciss-Input Capacitance
- 1.8nF
- Pd - Power Dissipation
- 50W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 80V
- Current - Continuous Drain(Id)
- 7.6A
- Reverse Transfer Capacitance (Crss)
- 90pF
- RDS(on)
- 33mΩ@6V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 46nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.198 g
Overview
This N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Compared to other MOSFETs with similar RDS(ON) specifications, these MOSFETs offer faster switching speeds and lower gate charge. As a result, the MOSFET is easy and safer to drive (even at very high frequencies), and enables higher overall efficiency in DC/DC power supply designs.
Applications
- High-efficiency switch-mode power supplies
- Half-bridge-based electronic ballasts for fluorescent lamps
- LED power supplies
Key features
- 7.6 A, 80 V, RDS(ON) = 0.029 Ω (at VGS = 10 V)
- RDS(ON) = 0.033 Ω (at VGS = 6 V)
- Low gate charge (typical 34 nC)
- Fast switching speed
- High-performance trench technology for ultra-low RDS(ON)
- High power and current handling capability
Alternatives
Similar parts — check the datasheet before substituting.
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