MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
FDWS86369-F085
107W 80V 65A 5.9mΩ@10V 1 N-channel N-Channel Power-56 Single FETs, MOSFETs RoHS
Power-56ROHS3 CompliantActive
- Manufacturer
- onsemi
- Manufacturer part #
- FDWS86369-F085
- Store part #
- C891132
- Package / case
- Power-56
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
9 in stock
#C891132
Stock & price checked 35 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹455.89 | ₹455.89 |
| 10+ | ₹447.94 | ₹4,479.40 |
| 30+ | ₹442.56 | ₹13,276.80 |
| 100+ | ₹437.41 | ₹43,741.00 |
1 × ₹455.89
₹455.89
excl. GST
₹537.95 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDWS86369-F085
₹455.89 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 400pF
- Ciss-Input Capacitance
- 2.47nF
- Pd - Power Dissipation
- 107W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 80V
- Current - Continuous Drain(Id)
- 65A
- Reverse Transfer Capacitance (Crss)
- 14pF
- RDS(on)
- 5.9mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 35nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.778 g
Overview
This N-channel MOSFET is manufactured using Fairchild Semiconductor's advanced PowerTrench® process. Combining the advantages of silicon technology and Dual Cool™ packaging, it achieves ultra-low on-resistance rDS(on) with extremely low junction-to-ambient thermal resistance, while maintaining excellent switching performance.
Applications
- Automotive engine control
- Powertrain management
- Solenoid and motor drivers
- Integrated starter-generator
- 12V system main switch
Key features
- Typical RDS(on) = 5.9 mΩ at VGS = 10 V, ID = 65 A
- Typical Qg(tot) = 35 nC at VGS = 10 V, ID = 65 A
- Single-pulse avalanche energy capability (UIS)
- RoHS compliant
- AEC Q101 qualified
- Solderable flanks for AOI
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