
onsemiDatasheet (PDF)
FGA40N65SMD
IGBT FS (Field Stop) 650V Through Hole TO-3P
TO-3PROHS3 CompliantActive
IGBT 650V TO-3P
- Manufacturer
- onsemi
- Manufacturer part #
- FGA40N65SMD
- Store part #
- C444005
- Package / case
- TO-3P
- Category
- Single IGBTs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
546 in stock
#C444005
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹335.08 | ₹335.08 |
| 10+ | ₹312.92 | ₹3,129.20 |
| 30+ | ₹247.94 | ₹7,438.20 |
| 90+ | ₹233.81 | ₹21,042.90 |
| 450+ | ₹227.52 | ₹1,02,384.00 |
| 900+ | ₹224.69 | ₹2,02,221.00 |
1 × ₹335.08
₹335.08
excl. GST
₹395.39 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
FGA40N65SMD
₹335.08 for 1 + GST
Specifications
- Td(off)
- 92ns
- Pd - Power Dissipation
- 349W
- Td(on)
- 12ns
- Current - Collector(Ic)
- 80A
- Collector-Emitter Breakdown Voltage (Vces)
- 650V
- Reverse Transfer Capacitance (Cres)
- 50pF
- IGBT Type
- FS (Field Stop)
- Gate-Emitter Threshold Voltage (Vge(th)@Ic)
- 3.5V@250uA
- Operating Temperature
- -55℃~+175℃
- Vce Saturation(VCE(sat))
- 2.5V@40A,15V
- Reverse Recovery Time(trr)
- 42ns
- Switching Energy(Eoff)
- 260uJ
- Turn-On Energy (Eon)
- 820uJ
- Input Capacitance(Cies)
- 1.88nF
- Output Capacitance(Coes)
- 180pF
- Gate Charge(Qg)
- 119nC
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7 g
Same category
More in Single IGBTs
onsemi
HGTD1N120BNS9AIGBT NPT (Non-Punch Through) 1.2kV 5.3A 60W Surface Mount TO-252AA
From
₹151.17
18,103 in stock
Hangzhou Silan Microelectronics
SGT50T65FD1PN235W 100A 650V FS (Field Stop) TO-3P-3 Single IGBTs
From
₹176.06
14,966 in stock




