HXY MOSFETDatasheet (PDF)
FGH50T65SQD-F155-HXY
250W 80A 650V TO-247 Single IGBTs RoHS
TO-247ROHS CompliantActive
Insulated Gate Bipolar Transistor
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- FGH50T65SQD-F155-HXY
- Store part #
- C49003308
- Package / case
- TO-247
- Category
- Single IGBTs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
14 in stock
#C49003308
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹367.13 | ₹367.13 |
| 10+ | ₹313.83 | ₹3,138.30 |
| 30+ | ₹282.22 | ₹8,466.60 |
| 90+ | ₹250.23 | ₹22,520.70 |
| 510+ | ₹235.42 | ₹1,20,064.20 |
| 990+ | ₹228.73 | ₹2,26,442.70 |
1 × ₹367.13
₹367.13
excl. GST
₹433.21 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
FGH50T65SQD-F155-HXY
₹367.13 for 1 + GST
Specifications
- Pd - Power Dissipation
- 250W
- Td(off)
- 110ns
- Td(on)
- 17ns
- Current - Collector(Ic)
- 80A
- Collector-Emitter Breakdown Voltage (Vces)
- 650V
- Reverse Transfer Capacitance (Cres)
- 13pF
- Gate-Emitter Threshold Voltage (Vge(th)@Ic)
- 3.2V@250uA
- Operating Temperature
- -40℃~+175℃
- Vce Saturation(VCE(sat))
- 2.1V@50A,15V
- Reverse Recovery Time(trr)
- 56ns
- Switching Energy(Eoff)
- 510uJ
- Turn-On Energy (Eon)
- 1.35mJ
- Input Capacitance(Cies)
- 1.916nF
- Output Capacitance(Coes)
- 139pF
- Gate Charge(Qg)
- 71nC@15V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7.687 g
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