MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
FQD2N50TF-VB
650V 2A 60W 3.8Ω@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs
TO-252RoHSActive
N-Channel 650 V (D-S) MOSFET
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- FQD2N50TF-VB
- Store part #
- C19711318
- Package / case
- TO-252
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
45 in stock
#C19711318
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹72.90 | ₹72.90 |
| 10+ | ₹57.99 | ₹579.90 |
| 30+ | ₹51.46 | ₹1,543.80 |
| 100+ | ₹43.49 | ₹4,349.00 |
| 500+ | ₹39.91 | ₹19,955.00 |
| 1,000+ | ₹37.81 | ₹37,810.00 |
1 × ₹72.90
₹72.90
excl. GST
₹86.02 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
FQD2N50TF-VB
₹72.90 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 40pF
- Current - Continuous Drain(Id)
- 2A
- Ciss-Input Capacitance
- 330pF
- Pd - Power Dissipation
- 60W
- Reverse Transfer Capacitance (Crss)
- 5pF
- RDS(on)
- 3.8Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 15nC
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.36 g
Overview
Key features
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Compliant to RoHS directive 2002/95/EC
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