MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HXY MOSFETDatasheet (PDF)
GAN041-650WSBQ-HXY
650V 49A 242W 49mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS
TO-247ROHS CompliantActive
SiC Power MOSFET N-Channel Enhancement Mode
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- GAN041-650WSBQ-HXY
- Store part #
- C48972063
- Package / case
- TO-247
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
1 in stock
#C48972063
Stock & price checked 42 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹988.62 | ₹988.62 |
| 10+ | ₹852.95 | ₹8,529.50 |
| 30+ | ₹770.21 | ₹23,106.30 |
| 90+ | ₹700.86 | ₹63,077.40 |
1 × ₹988.62
₹988.62
excl. GST
₹1,166.57 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
GAN041-650WSBQ-HXY
₹988.62 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 49A
- Output Capacitance(Coss)
- 190pF
- Ciss-Input Capacitance
- 1.823nF
- Pd - Power Dissipation
- 242W
- Reverse Transfer Capacitance (Crss)
- 19pF
- RDS(on)
- 49mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 96nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 4V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8.18 g
Same category
