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InfineonDatasheet (PDF)
GS61004B-TR
100V 38A 16mΩ 1 N-channel N-Channel SMD-3P,4.6x4.4mm Single FETs, MOSFETs RoHS
SMD-3P,4.6x4.4mmROHS CompliantActive
100V enhancement mode GaN transistor
- Manufacturer
- Infineon
- Manufacturer part #
- GS61004B-TR
- Store part #
- C31270677
- Package / case
- SMD-3P,4.6x4.4mm
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
15 in stock
#C31270677
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹759.72 | ₹759.72 |
| 10+ | ₹655.00 | ₹6,550.00 |
| 30+ | ₹592.77 | ₹17,783.10 |
| 100+ | ₹529.90 | ₹52,990.00 |
| 500+ | ₹501.06 | ₹2,50,530.00 |
| 1,000+ | ₹487.84 | ₹4,87,840.00 |
1 × ₹759.72
₹759.72
excl. GST
₹896.47 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
GS61004B-TR
₹759.72 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 100V
- Output Capacitance(Coss)
- 110pF
- Current - Continuous Drain(Id)
- 38A
- Ciss-Input Capacitance
- 260pF
- Technology
- E-mode
- Reverse Transfer Capacitance (Crss)
- 5pF
- RDS(on)
- 16mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 3.3nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 1.7V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.064 g
Overview
The GS61004B is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX packaging enables low inductance & low thermal resistance in a small package. The GS61004B is a bottom-cooled transistor that offer very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
Applications
- Enterprise and networking power
- Uninterruptable power supplies
- Industrial motor drives
- Solar power
- Fast battery charging
- Class D audio amplifiers
- Smart home
- Wireless Power Transfer
Key features
- 100V enhancement mode power transistor
- Bottom-side cooled configuration
- RDS(on) = 16 mΩ
- IDS(max) = 38 A
- Ultra-low FOM island Technology® die
- Low inductance GaNPX package
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- Very high switching frequency (>10 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 4.6 × 4.4 mm² PCB footprint
- RoHS 3 (6 + 4) compliant
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