Varnitronics
GT50JR22(S1WLD,E,S TOSHIBA
TOSHIBA

GT50JR22(S1WLD,E,S

250W 50A 600V TO-3P-3 Single IGBTs

TO-3P-3RoHSActive

Discrete IGBTs Silicon N-Channel IGBT

Manufacturer
TOSHIBA
Manufacturer part #
GT50JR22(S1WLD,E,S
Store part #
C2880445
Package / case
TO-3P-3
Category
Single IGBTs
Packaging
Tube-packed
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

8,674 in stock

#C2880445

Stock & price checked 7 days ago

QuantityUnit pricePack price
1+₹184.10₹184.10
10+₹153.92₹1,539.20
25+₹117.25₹2,931.25
100+₹98.46₹9,846.00
500+₹90.16₹45,080.00
1,000+₹86.36₹86,360.00

1 × ₹184.10

₹184.10

excl. GST

₹217.24 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 7–10 working days
  • GST invoice with every order
  • Standard pack: 25 per tube

GT50JR22(S1WLD,E,S

₹184.10 for 1 + GST

Specifications

Td(off)
330ns
Pd - Power Dissipation
250W
Td(on)
250ns
Current - Collector(Ic)
50A
Collector-Emitter Breakdown Voltage (Vces)
600V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
7.5V
Vce Saturation(VCE(sat))
2.2V@50A,15V
Collector Cut-Off Current (Ices)
1mA
Reverse Recovery Time(trr)
350ns
Input Capacitance(Cies)
2.7nF

Packaging & compliance

RoHS
RoHS
Lifecycle
Active
Moisture sensitivity
MSL 1 (unlimited)
ECCN
EAR99
Packaging
Tube-packed
Standard pack
25 / Tube
Sold per
Piece
Minimum order
1
Unit weight
7.148 g

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