MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HL(Haolin Elec)Datasheet (PDF)
HB840U(CHA)
135W 520V 8A 850mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs
TO-263RoHSSold out at source
N-Channel MOSFET, Current:8.0A, Breakdown Voltage:520V
- Manufacturer
- HL(Haolin Elec)
- Manufacturer part #
- HB840U(CHA)
- Store part #
- C2689012
- Package / case
- TO-263
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
Out of stock
#C2689012
Stock & price checked 37 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹58.45 | ₹58.45 |
| 10+ | ₹46.64 | ₹466.40 |
| 50+ | ₹38.50 | ₹1,925.00 |
| 100+ | ₹32.19 | ₹3,219.00 |
| 500+ | ₹29.33 | ₹14,665.00 |
| 1,000+ | ₹27.70 | ₹27,700.00 |
| 2,000+ | ₹27.29 | ₹54,580.00 |
| 4,000+ | ₹27.10 | ₹1,08,400.00 |
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
Specifications
- Output Capacitance(Coss)
- 170pF
- Ciss-Input Capacitance
- 1.3nF
- Pd - Power Dissipation
- 135W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 520V
- Current - Continuous Drain(Id)
- 8A
- Reverse Transfer Capacitance (Crss)
- 26pF
- RDS(on)
- 850mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 33nC@10V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Sold out at source
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.48 g
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