MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HXY MOSFETDatasheet (PDF)
HBSC066N06NSATMA1
N-Channel 60V 80A 108W Surface Mount DFN5x6-8L
DFN5x6-8LRoHSActive
MOSFET N-CH 60V 80A DFN5x6-8L
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- HBSC066N06NSATMA1
- Store part #
- C42401346
- Package / case
- DFN5x6-8L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
38 in stock
#C42401346
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹89.53 | ₹89.53 |
| 10+ | ₹71.93 | ₹719.30 |
| 30+ | ₹63.24 | ₹1,897.20 |
| 100+ | ₹54.76 | ₹5,476.00 |
| 500+ | ₹49.55 | ₹24,775.00 |
| 1,000+ | ₹46.94 | ₹46,940.00 |
1 × ₹89.53
₹89.53
excl. GST
₹105.65 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
HBSC066N06NSATMA1
₹89.53 for 1 + GST
Specifications
- Configuration
- Standalone
- Drain to Source Voltage
- 60V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 286pF
- Current - Continuous Drain(Id)
- 80A
- Ciss-Input Capacitance
- 4.136nF
- Pd - Power Dissipation
- 108W
- Reverse Transfer Capacitance (Crss)
- 257pF
- RDS(on)
- 6mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 90nC@10V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.14 g
Alternatives
Similar parts — check the datasheet before substituting.
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