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HXY MOSFETDatasheet (PDF)
HCG65140DBA
650V 17A 113W 100mΩ 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
GaN-on-Silicon Enhancement-mode Power Transistor
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- HCG65140DBA
- Store part #
- C22396445
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
48 in stock
#C22396445
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹444.09 | ₹444.09 |
| 10+ | ₹382.47 | ₹3,824.70 |
| 30+ | ₹345.91 | ₹10,377.30 |
| 100+ | ₹308.95 | ₹30,895.00 |
| 500+ | ₹291.81 | ₹1,45,905.00 |
| 1,000+ | ₹284.30 | ₹2,84,300.00 |
1 × ₹444.09
₹444.09
excl. GST
₹524.03 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
HCG65140DBA
₹444.09 for 1 + GST
Specifications
- Drain to Source Voltage
- 650V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 17A
- Output Capacitance(Coss)
- 40pF
- Ciss-Input Capacitance
- 125pF
- Technology
- E-mode
- Pd - Power Dissipation
- 113W
- Reverse Transfer Capacitance (Crss)
- 0.5pF
- RDS(on)
- 100mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 3.3nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 1.7V
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.23 g
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