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HXY MOSFETDatasheet (PDF)
HCG65200DAA
650V 10A 75W 160mΩ 1 N-channel N-Channel DFN-8(8x8) Single FETs, MOSFETs
DFN-8(8x8)RoHSActive
650V GaN-on-Silicon Enhancement-mode Power Transistor
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- HCG65200DAA
- Store part #
- C22396442
- Package / case
- DFN-8(8x8)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
7 in stock
#C22396442
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹450.59 | ₹450.59 |
| 10+ | ₹387.67 | ₹3,876.70 |
| 30+ | ₹348.36 | ₹10,450.80 |
| 100+ | ₹307.98 | ₹30,798.00 |
| 500+ | ₹289.72 | ₹1,44,860.00 |
| 1,000+ | ₹282.00 | ₹2,82,000.00 |
1 × ₹450.59
₹450.59
excl. GST
₹531.70 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
HCG65200DAA
₹450.59 for 1 + GST
Specifications
- Drain to Source Voltage
- 650V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 27pF
- Current - Continuous Drain(Id)
- 10A
- Ciss-Input Capacitance
- 83pF
- Pd - Power Dissipation
- 75W
- Technology
- E-mode
- Reverse Transfer Capacitance (Crss)
- 0.4pF
- RDS(on)
- 160mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 2.3nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 1.6V
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.3 g
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