MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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25,99,250 in stock
HXY MOSFETDatasheet (PDF)
HCG65200DBA
650V 10A 75W 160mΩ 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
GaN-on-Silicon Enhancement-mode Power Transistor
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- HCG65200DBA
- Store part #
- C22396443
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
25 in stock
#C22396443
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹527.64 | ₹527.64 |
| 10+ | ₹456.77 | ₹4,567.70 |
| 30+ | ₹414.63 | ₹12,438.90 |
| 100+ | ₹372.07 | ₹37,207.00 |
| 500+ | ₹352.41 | ₹1,76,205.00 |
| 1,000+ | ₹343.54 | ₹3,43,540.00 |
1 × ₹527.64
₹527.64
excl. GST
₹622.62 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
HCG65200DBA
₹527.64 for 1 + GST
Specifications
- Drain to Source Voltage
- 650V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 27pF
- Current - Continuous Drain(Id)
- 10A
- Ciss-Input Capacitance
- 83pF
- Pd - Power Dissipation
- 75W
- Technology
- E-mode
- Reverse Transfer Capacitance (Crss)
- 0.4pF
- RDS(on)
- 160mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 2.3nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 1.6V
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.23 g
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